[9a-N107-1~11] 6.4 Thin films and New materials | The 86th JSAP Autumn Meeting 2025

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Session Details

Oral presentation6 Thin Films and Surfaces : 6.4 Thin films and New materials

[9a-N107-1~11]6.4 Thin films and New materials

Tue. Sep 9, 2025 9:00 AM - 12:00 PM JST
Tue. Sep 9, 2025 12:00 AM - 3:00 AM UTC

N107 (Lecture Hall North)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[9a-N107-1]Study of the substrate dependence of the structural differences in Cr-Al thin films and their application to the force sensors

〇Natsumi Aoki¹, Masaya Tsuno¹, Myo Than Htay Yamamoto², Yoshio Hashimoto² (1.KOA Co., Ltd., 2.Shinshu Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-N107-2]Characterization of porous Al films deposited under atmosphere by vacuum evaporation method

〇(M1)Hiroki Shibata¹, Midori Kawamura¹, Takayuki Kiba¹ (1.Kitami Inst.of Tech.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N107-3]Thermoelectric property of Cu₂Se thin films doped with FeSi₂ at room temperature

〇Masahiro Goto¹, Michiko Sasaki¹, Taku Moronaga¹, Toru Hara¹, Yibin Xu¹ (1.NIMS)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N107-4]Epitaxial growth of single-phase AgCrSe2 thin films by controlling Ag/Cr composition ratio using pulsed-laser deposition

〇Junichi Shiogai^1,2, Yusuke Tajima¹, Kenshin Inamura¹, Sebun Masaki¹, Takumi Yamazaki³, Takeshi Seki^3,4, Kazutaka Kudo^1,2, Jobu Matsuno^1,2 (1.Univ. of Osaka, 2.OTRI-Spin, Univ. of Osaka, 3.IMR, Tohoku Univ., 4.CSIS, Tohoku Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N107-5]Synthesis of YTe₃ Thin Films by In-Situ Heating of Y/Te Multilayer Precursor

〇Shiki Kimura¹, Masamichi Negishi¹, Hideyuki Kawasoko², Tomoteru Fukumura^1,3 (1.Tohoku Univ., 2.Tokyo Metropolitan Univ., 3.AIMR Tohoku Univ.)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[9a-N107-6]Sputtering growth and characterization of kagome-lattice alloy CoSn thin films

〇(M1)Tomoya Ikawa¹, Kohei Fujiwara¹ (1.Rikkyo Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N107-7][Invited Talk] Formation of GeO₂ layer using atomic layer deposition and GeSn surface passivation

〇Yoshiki Kato¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigehisa Shibayama¹ (1.Grad.Sch.Eng.,Nagoya Univ., 2.IMaSS,Nagoya Univ.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N107-8]Synthesis of stoichiometric SrLiH₃ epitaxial thin films

〇(M1)Yuma Ishibashi¹, Erika Fukushi¹, Takuya Majima², Takayuki Harada³, Hiroyuki Oguchi¹ (1.Shibaura Tech., 2.Kyoto Univ., 3.NIMS)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

The 86th JSAP Autumn Meeting 2025

Session Details

[9a-N107-1~11]6.4 Thin films and New materials

[9a-N107-1]Study of the substrate dependence of the structural differences in Cr-Al thin films and their application to the force sensors

[9a-N107-2]Characterization of porous Al films deposited under atmosphere by vacuum evaporation method

[9a-N107-3]Thermoelectric property of Cu₂Se thin films doped with FeSi₂ at room temperature

[9a-N107-4]Epitaxial growth of single-phase AgCrSe2 thin films by controlling Ag/Cr composition ratio using pulsed-laser deposition

[9a-N107-5]Synthesis of YTe₃ Thin Films by In-Situ Heating of Y/Te Multilayer Precursor

[9a-N107-6]Sputtering growth and characterization of kagome-lattice alloy CoSn thin films

[9a-N107-7][Invited Talk] Formation of GeO₂ layer using atomic layer deposition and GeSn surface passivation

[9a-N107-8]Synthesis of stoichiometric SrLiH₃ epitaxial thin films

[9a-N107-9]Hydride Ion Conduction in BaH₂ Epitaxial Films Grown Under Different Conditions

[9a-N107-10]Growth of SrH₂ epitaxial thin film using H-radical reactive infrared laser deposition

[9a-N107-11]Surface Catalyst Layer of Otto-Type Plasmon Sensor for Hydrogen Gas Detection

Session Details

[9a-N107-1~11]6.4 Thin films and New materials

[9a-N107-1]Study of the substrate dependence of the structural differences in Cr-Al thin films and their application to the force sensors

[9a-N107-2]Characterization of porous Al films deposited under atmosphere by vacuum evaporation method

[9a-N107-3]Thermoelectric property of Cu2Se thin films doped with FeSi2 at room temperature

[9a-N107-4]Epitaxial growth of single-phase AgCrSe2 thin films by controlling Ag/Cr composition ratio using pulsed-laser deposition

[9a-N107-5]Synthesis of YTe3 Thin Films by In-Situ Heating of Y/Te Multilayer Precursor

[9a-N107-6]Sputtering growth and characterization of kagome-lattice alloy CoSn thin films

[9a-N107-7][Invited Talk] Formation of GeO2 layer using atomic layer deposition and GeSn surface passivation

[9a-N107-8]Synthesis of stoichiometric SrLiH3 epitaxial thin films

[9a-N107-9]Hydride Ion Conduction in BaH2 Epitaxial Films Grown Under Different Conditions

[9a-N107-10]Growth of SrH2 epitaxial thin film using H-radical reactive infrared laser deposition

[9a-N107-11]Surface Catalyst Layer of Otto-Type Plasmon Sensor for Hydrogen Gas Detection

[9a-N107-3]Thermoelectric property of Cu₂Se thin films doped with FeSi₂ at room temperature

[9a-N107-5]Synthesis of YTe₃ Thin Films by In-Situ Heating of Y/Te Multilayer Precursor

[9a-N107-7][Invited Talk] Formation of GeO₂ layer using atomic layer deposition and GeSn surface passivation

[9a-N107-8]Synthesis of stoichiometric SrLiH₃ epitaxial thin films

[9a-N107-9]Hydride Ion Conduction in BaH₂ Epitaxial Films Grown Under Different Conditions

[9a-N107-10]Growth of SrH₂ epitaxial thin film using H-radical reactive infrared laser deposition