[9a-N107-1~11] 6.4 Thin films and New materials

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N107-7] [Invited Talk] Formation of GeO₂ layer using atomic layer deposition and GeSn surface passivation

〇Yoshiki Kato¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigehisa Shibayama¹ (1.Grad.Sch.Eng.,Nagoya Univ., 2.IMaSS,Nagoya Univ.)

Keywords:

Atomic Layer Deposition,GeSn,passivation