[9a-N206-1~11] 15.5 Group IV crystals and alloys

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N206-6] Evaluation of Defects in Si-Nanosheets Formed by CF₄/H₂ Plasma Etching of Si_0.7Ge_0.3/Si/Si_0.7Ge_0.3 Stacked Structures

〇Kotaro Ozaki¹, Yusuke Imai¹, Yuki Imai¹, Takayoshi Tsutsumi², Kenij Ishikawa², Yuji Yamamoto^1,3, Wei-Chen Wen³, Katsunori Makihara^1,3 (1.Nagoya Univ. Eng., 2.Nagoya Univ. cLPS, 3.IHP)

Keywords:

Si-Nanosheet