[9a-N301-1~11] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-N301-2] Fabrication of ternally alloy semiconductor template of AlGaN using nanochannel epitaxy

〇Shigeya Naritsuka¹, Takuya Takahashi¹, Ryuya Matsumoto¹, Kouki Nagase¹, Takahiro Maruyama¹ (1.Meijo Univ.)

Keywords:

nanchannel epitaxy,AlGaN,template substrate