[9a-N301-1~11] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N301-3] RF-MBE GaN Growth on Patterned SiC Substrate Fabricated by PEM Stamping

〇Yoshiki Okubo¹, Atsushi Ota¹, Trang Nakamoto², Takashi Fujii³, Junji Murata¹, Tsutomu Araki¹ (1.Ritsumeikan Univ., 2.R-GIRO, 3.ROST)

Keywords:

PEM Stamping,Epitaxial Lateral Overgrowth