[9a-N301-1~11] 15.4 III-V-group nitride crystals

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N301-4] Misfit accommodation in a single atomic InN layer at a highly mismatched InN/GaN

Tomiki Nagase¹, Kenta Chokawa¹, Emi Kano¹, Keisuke Fukuta¹, Kenji Shiraishi¹, Atsushi Oshiyama¹, Tsutomu Araki², 〇Nobuyuki Ikarashi¹ (1.Nagoya Univ., 2.Ritsumeikan Univ.)

Keywords:

nitride semiconductor,interface structure,InN

The atomic structure and lattice mismatch accommodation mechanism at the InN/GaN interface (11.1% mismatch) have been revealed using atomic resolution electron microscopy and large-scale density functional theory calculations. The interface structure shows that the atomic arrangement of the single InN atomic layer at the interface changes to allow forming a bonding network connecting InN and GaN without generating misfit dislocations.