[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N302-10] Analysis of thermal conductivity of Si_xGe_1-x by molecular dynamics calculation

〇Koichi Kakimoto¹ (1.IMR, Tohoku Univ.)

Keywords:

semiconductor,SiGe,simulation

This paper reports that thermal conductivity of SixGe1-x under thermal equiliburium by molecuer dynamics using in-house code. The result indicates that the values of SixGe1-x are lower than 10 W/mK. I also report the results how atomic arrangement affects the values.