[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N302-11] Effect of transparency of a crystal and a melt of Ga₂O₃ on temperature distribution during OCCC growth

〇Koichi Kakimoto¹, Taketoshi Tomida², Vladimir Kochurikhin², Masanori Kitahara², Kei Kamada^1,2, Satoshi Nakano³, Yao Yongzhao⁴, Kazuaki Akaiwa⁵, Akira Yoshikawa^1,2 (1.IMR, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.Mie Univ., 5.Tottori Univ.)

Keywords:

semiconductor,Ga2O3,simulation

We studied heat and mass transfer in the crystal and the melt of Ga2O3 during crystal growth using skull melting method. The results show that the maximum temperature in the melt in the case of semi-transparent crystal and the melt locates at the center of the melt.