[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[9a-N302-2] Misorientation angle dependence on Silicon (110) surface morphology during high-temperature annealing

〇Takeshi Senda¹, Ken Hayakawa¹, Haruo Sudo¹, Hisashi Matsumura¹ (1.GlobalWafers Japan Co., Ltd.)

Keywords:

misorientation angle,surface reconstruction,crystal orientation

We studied on the reconstructed surface morphology of Si (110) during high temperature annealing. As a result, a periodic surface structure was confirmed. The surface showed a characteristic triangular shape that changed depending on the misorientation angle from Si (110) surface.