[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N302-3] Oxide Film Density on Si (100) and (110) Wafers during Oxidation by RTP

〇KEN HAYAKAWA¹, Haruo Sudo¹, Takeshi Senda¹, Hisashi Matsumura¹ (1.GlobalWafers Japan Co., Ltd.)

Keywords:

Rapid Thermal Process,Oxide film density,X-Ray Reflectivity