Presentation Information

[9a-N302-4]Annihilation Behavior of Void Defects in Si (100) and (110) Wafers during Oxidation by RTP

〇Haruo Sudo1, Ken Hayakawa1, Takeshi Senda1, Hisashi Matsumura1 (1.GWJ)

Keywords:

point defect,Rapid Thermal Process,void defect