[9a-N302-1~11] 15.7 Crystal characterization, impurities and crystal defects

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N302-7] Diffusion behavior of fluorine on the CH₂F⁺ implanted Si epitaxial wafer

〇Ryo Hirose¹, Takeshi Kadono¹, Koji Kobayashi¹, Sho Nagatomo¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

Keywords:

silicon wafer,gettering,ion implantation