Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N305-10]Improved electron mobility of polycrystalline InGaAs thin films via solid-phase crystallization

〇(M1)Yutaka Kiyono¹, Koki Nozawa¹, Seo Jisol¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

Keywords:

semiconductor,crystal growth

In this study, we aimed to improve the carrier mobility of polycrystalline InGaAs thin films for thin-film transistor applications by applying solid-phase crystallization (SPC) under controlled deposition temperature (T_d) and As composition ratio (R_InGa/As). An amorphous precursor was obtained under low T_d and R_InGa/As conditions, and subsequent high-temperature SPC promoted crystallization, resulting in an electron mobility (μ_n) of up to 830 cm² V^-1 s^-1. These results demonstrate that optimizing the precursor state and annealing conditions is crucial for enhancing μ_n.

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