[9a-N305-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy | The 86th JSAP Autumn Meeting 2025

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Oral presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[9a-N305-1~11]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Tue. Sep 9, 2025 9:00 AM - 12:00 PM JST
Tue. Sep 9, 2025 12:00 AM - 3:00 AM UTC

N305 (Lecture Hall North)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[9a-N305-1][The 58th Young Scientist Presentation Award Speech] Evaluation of spin-polarization amplification dynamics in dilute nitride InGaAsN quantum dots grown at low temperature via time-resolved photoluminescence

〇Ayano Morita¹, Junichi Takayama¹, Akihiro Murayama¹, Satoshi Hiura¹ (1.Hokkaido Univ.)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N305-2]Nitrogen composition dependence of circularly polarized luminescence properties of dilute nitride GaNAs multiple quantum wells

〇Hiroto Kise¹, Keisuke Minehisa², Junichi Takayama¹, Akihiro Murayama¹, Fumitaro Ishikawa², Satoshi Hiura¹ (1.IST, Hokkaido Univ., 2.RCIQE, Hokkaido Univ.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N305-3]Circularly polarized luminescence properties of dilute nitride InGaAsN/GaAs quantum wells grown at low temperature

〇Eita Tagawa¹, Keisuke Minehisa², Ayano Morita¹, Hiroto Kise¹, Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST,Hokkaido Univ., 2.RCIQE,Hokkaido Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N305-4]Thermal stability of donors and acceptors in InGaAsN

〇(P)Masahiro Kawano¹, Hirotaka Tamashiro¹, Nobuaki Kojima¹, Yoshio Ohshita¹ (1.Toyota Tech. Inst.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N305-5]Molecular Beam Epitaxial Growth and Optical Characteristics of Nitrogen δ-doped GaAs Nanowires with different amounts of Nitrogen

〇Mahiro Sano^1,2, Keisuke Minehisa^1,2, Hidetoshi Hashimoto^1,2, Fumitaro Ishikawa² (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[9a-N305-6]Optical characterization of InAs/GaAsSb superlattices on InAs substrates fabricated
by metalorganic vapor deposition

〇Kohei Yamamoto¹, Hidetoshi Suzuki¹, Masakazu Arai¹, Takeshi Fujisawa², Koji Maeda¹ (1.Miyazaki Univ., 2.Housei Univ.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N305-7]Effect of the number of GaAs layers on N distribution in GaAsN/GaAs superlattice thin films fabricated by ALE method.

〇Toranosuke Takeo¹, Koto Hayato¹, Suzuki Hidetoshi¹, Kawano Masahiro² (1.Miyazaki Univ., 2.Toyota Inst.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N305-8]Structural defect analysis of selective MOVPE regrown films on InP micro templates fabricated by lateral aspect ratio trapping method

〇Hiroya Homma¹, Hiroki Sugiyama¹, Tatsurou Hiraki¹, Tomonari Sato¹, Shinji Matsuo¹ (1.NTT)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[9a-N305-9]Selective MOVPE growth in microcavity for the fabrication of InP/InGaAs lateral HBTs

〇Shota Watanabe¹, Yasuyuki Miyamoto¹ (1.Science Tokyo)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N305-10]Improved electron mobility of polycrystalline InGaAs thin films via solid-phase crystallization

〇(M1)Yutaka Kiyono¹, Koki Nozawa¹, Seo Jisol¹, Takashi Suemasu¹, Kaoru Toko¹ (1.Univ. of Tsukuba)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N305-11]Habit change in crystal growth shape: How the nanoscale Kardar-Parisi-Zhang rough surfaces affect the mesoscale shape

〇Noriko Akutsu¹, Akira Kusaba¹, Yoshihiro Kangawa¹, Kozo Fujiwara², Kensaku Maeda³, Yasuhiro Akutsu⁴ (1.RIAM, Kyushu Univ., 2.IMR Tohoku Univ., 3.JAIST, 4.Grad. School of Sci. Osaka Univ.)

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