[9a-N305-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[9a-N305-3] Circularly polarized luminescence properties of dilute nitride InGaAsN/GaAs quantum wells grown at low temperature

〇Eita Tagawa¹, Keisuke Minehisa², Ayano Morita¹, Hiroto Kise¹, Junichi Takayama¹, Fumitaro Ishikawa², Akihiro Murayama¹, Satoshi Hiura¹ (1.IST,Hokkaido Univ., 2.RCIQE,Hokkaido Univ.)

Keywords:

dilute nitride semiconductor,photoluminescence,electron spin polarization