[9a-N305-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[9a-N305-5] Molecular Beam Epitaxial Growth and Optical Characteristics of Nitrogen δ-doped GaAs Nanowires with different amounts of Nitrogen

〇Mahiro Sano^1,2, Keisuke Minehisa^1,2, Hidetoshi Hashimoto^1,2, Fumitaro Ishikawa² (1.Hokkaido Univ., 2.Hokkaido Univ. RCIQE)

Keywords:

Molecular Beam Epitaxy,Nanowires,delta-doping