[9a-N305-1~11] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N305-8] Structural defect analysis of selective MOVPE regrown films on InP micro templates fabricated by lateral aspect ratio trapping method

〇Hiroya Homma¹, Hiroki Sugiyama¹, Tatsurou Hiraki¹, Tomonari Sato¹, Shinji Matsuo¹ (1.NTT)

Keywords:

direct growth of III-V semiconductors on Si,selective growth,MOVPE/MOCVD

We have been developing a technique for integrating photonics devices on SOI substrates using selective regrowth of III-V layers on InP microtemplates (MTs) grown by the lateral aspect ratio trapping method. However, it has recently been pointed out that planar defects such as stacking faults and rotational twins easily form in the MT. In this study, we report on the effects of these planar defects on the crystal structure of the selective regrowth layer on MTs.