[9a-N322-1~8] 13.7 Compound and power devices, process technology and characterization

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[9a-N322-2] Fabrication of AlGaN/GaN HBT with thinner Base layer

〇Shota Kokubo¹, Tanaka Atushi², Honda Yoshio^2,3,4, Amano Hiroshi^2,3,4 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.IAR Nagoya Univ.)

Keywords:

GaN,HBT

This research aims to improve the performance of AlGaN/GaN Heterojunction Bipolar Transistors (HBTs), which are promising candidates for next-generation high-frequency devices. To address the conventional issue of low current gain (with a previously reported value of 21), the thickness of the p-GaN base layer was optimized through simulation. The HBT was fabricated using the MOVPE method and, upon evaluation, achieved a maximum current gain of 100, significantly surpassing the conventional value. Furthermore, a high Early voltage (V_A = 172 V) was also confirmed, demonstrating the device's excellent output linearity.