[9a-N322-1~8] 13.7 Compound and power devices, process technology and characterization

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-N322-3] Demonstration of GaN Photoconductive Semiconductor Switch (PCSS) Utilizing a Semi-insulating GaN Substrate and Si-ion Implantation

〇Chinwei Li¹, Kenji Iso², Ryosho Nakane¹, Takuya Maeda¹ (1.UTokyo, 2.Mitsubishi Chemical Co.)

Keywords:

GaN,PCSS,Power device

To facilitate the use of highly variable renewable energy sources, research is advancing on power conversion technologies in the medium to high voltage range (5–50 kV). However, the extensive use of power modules leads to complex circuit configurations, making electromagnetic interference (EMI) a significant issue. Photoconductive semiconductor switch (PCSS) offer advantages such as ease of achieving high breakdown voltages and fast operation with high EMI immunity through optical triggering. In this study, We fabricated GaN PCSS devices by implanting Si ions into semi-insulating free-standing GaN substrates, evaluating its photoresponse characteristics and breakdown properties.