[9a-N322-1~8] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[9a-N322-5] Effect of inserting an AlN intermediate layer on atmospheric pressure activation of Mg ion-implanted GaN using OVPE

〇Shigeyoshi Usami¹, Yuta Ito², Sogo Yokoi¹, Atsushi Tanaka³, Junichi Takino⁴, Tomoaki Sumi⁴, Masayuki Imanishi¹, Masashi Yokoyama⁵, Masahiko Hata⁶, Yoshio Okayama⁴, Yoshio Honda³, Hiroshi Amano³, Yusuke Mori¹ (1.UOsaka, 2.Nagoya Univ., 3.IMaSS Nagoya Univ., 4.Panasonic Holdings Corp., 5.Sumitomo Chemical Co., Ltd., 6.Itochu Plastics Inc.)

Keywords:

OVPE method,GaN,Mg-ion implantation