[9a-N322-1~8] 13.7 Compound and power devices, process technology and characterization

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N322-7] Low-temperature PL characterization of pulsed-laser-annealed Mg-ion-implanted GaN

〇Asami Sugimoto¹, Shuntaro Ono¹, Arihiro Nishigaki¹, Yuzuka Minami², Masamitsu Toramaru², Yuko Arai², Yoshihiro Shimazaki², Yoshito Jin², Kazuyoshi Tomita³, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.JSW, 3.Nagoya Univ.)

Keywords:

pulsed-laser annealing,gallium nitride,photoluminescence