[9a-N322-1~8] 13.7 Compound and power devices, process technology and characterization

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[9a-N322-8] Electrical characterization of pulsed-laser annealed Si-ion implanted GaN

〇(M2)Arihiro Nishigaki¹, Haruto Hirota¹, Shuntaro Ono¹, Asami Sugimoto¹, Yuko Arai², Yuzuka Minami², Yoshihiro Shimazaki², Masamitu Toramaru², Yoshihito Jin², Kazuyoshi Tomita³, Akira Uedono⁴, Daichi Imai¹, Takao Miyajima¹ (1.Meijo Univ., 2.JSW, 3.Nagoya Univ., 4.Tsukuba Univ.)

Keywords:

electronic devices,gallium nitride,pulsed laser