[9a-N401-1~11] CS.9 Code-sharing session of 6.5&7.5

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-N401-10] Growth Mode and Mechanism of Interface Trap Suppression in PECVD-SiO₂/Si
Deduced from Correlation between XPS Si 2p Spectra and Interface Trap Density

〇Sakura-Nishino Takeda¹, Emilia Hashamova², Sai Hasegawa¹, Mutsunori Uenuma³, Tomoyuki Miyao¹, Naoaki Ono¹, Yukiharu Uraoka¹, Kimito Funatsu¹ (1.NAIST, 2.KIT, 3.AIST)

Keywords:

PECVD,SiO2,XPS

We investigated the thickness dependence of the Si 2p XPS spectra for TEOS-PECVD-SiO₂/Si(001) films fabricated under various process conditions, and examined its correlation with the interface trap density (D_it). The XPS results indicated negative charge accumulation near the interface, and the amount of accumulated charge showed a positive correlation with D_it. Based on these findings, we propose a growth mode for PECVD-SiO₂/Si(001) and suggest favorable process conditions for reducing D_it.