[9a-N401-1~11] CS.9 Code-sharing session of 6.5&7.5

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-N401-4] Epitaxial crystalline SiN layer on SiC(0001)

〇Jo Onoda¹, Hiroshi Ando², Robert Wolkow³, Jason Pitters⁴, Takeshi Nakagawa⁵, Anton Viscovskiy⁶, Satoru Tanaka⁶ (1.UTEF, 2.PhoSIC, 3.Univ. Alberta, 4.NRC, 5.Kyushu Univ. IGSES, 6.Kyushu Univ.)

Keywords:

silicon nitride layer,LEED,STM

We have identified the formation of an epitaxial silicon nitride (SiN) layer on the SiC(0001) surface. In this presentation, we report on the fabrication method of the SiN layer, the surface structure determined by low-energy electron diffraction (LEED), and the atomic-resolution imaging obtained by scanning tunneling microscopy (STM). On the SiN surface, the topmost silicon atoms exhibit a honeycomb arrangement of dangling bonds, which may give rise to intriguing physical properties analogous to those of graphene.