[9a-N406-1~7] 1.3 Novel technologies and interdisciplinary engineering

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-N406-4] Direct Measurement of Semiconductor Laser Diodes by Thermo-Microscope

〇kiyoto taniguchi^1,2, Taro Itatani², Joji maeda¹, Akihiro Noriki², Takeru Amano² (1.Tokyo Univ. of Science, 2.AIST)

Keywords:

Laser diode,Thermo-Microscope,Temperature distribution

In Co-Packaged Optics (CPO), integrating laser diodes near switch ASICs poses thermal reliability challenges due to the elevated operating temperatures. In this study, we evaluate the temperature distribution of a commercial InP-based communication laser diode using high-resolution infrared thermography with spatial resolution below 10 µm. Temperature mapping was conducted under electrical injection (20 mA) focusing on three regions: the top stripe, top metal contact, and chip facet. The highest temperature (48.6 °C) was observed at the emission stripe, corresponding to the active recombination region. This temperature rise reflects heat generation from carrier recombination and contact resistance. The method offers a powerful tool for thermal design and heat dissipation optimization in CPO-integrated devices.