Presentation Information

[9a-P06-3]Etching characteristics of single crystal Si with 1% KOH solution containing carbon-based materials

〇Kengo Kimura1, Hiroshi Tanaka1 (1.Aichi Institute of Technology)

Keywords:

wet etching,carbon,silicon

In this study, we investigated the etching characteristics of 1% KOH aqueous solutions containing carbon-based materials. Five types of carbon-based materials were used in the experiment: diamond, graphite, graphene, graphene oxide, and carbon nanotubes. When the carbon-based materials other than diamond were contained the solution, the etching rate of the Si(100) surface increased compared to when only 1% KOH was used.