[9a-S203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[9a-S203-1] [The 58th Young Scientist Presentation Award Speech] Improvement of crystal quality by selective H₂-introduced molecular beam epitaxy and room temperature operation of GeSn/GeSiSn resonant tunneling diode

〇Shota Torimoto¹, Shuto Ishimoto¹, Yoshiki Kato¹, Mitsuo Sakashita¹, Masashi Kurosawa¹, Osamu Nakatsuka^1,2, Shigehisa Shibayama¹ (1.Grad. Sch. of Eng., Nagoya Univ., 2.IMaSS, Nagoya Univ.)

Keywords:

Resonant tunneling diode,GeSn,GeSiSn