Presentation Information

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[9a-S203-10]Structural Effects on Program Characteristics in 3D Flash Memories with Gate Side Injection Operation

〇Tatsuya Ishikawa¹, Hiroshi Takeda¹, Takashi Kurusu¹ (1.KIOXIA Corporation)

Keywords:

TCAD,Flash Memories

The gate-side injection (GSI ) operation, which injects carriers from the gate side during programming, can control programming efficiency based on the capacitance ratio of the blocking oxide to the tunnel oxide, and it is expected that it could significantly improve the programming characteristics of three-dimensional flash memories. In this study, we discuss the improvement of programming efficiency when applying this operation to cylindrical three-dimensional (3D) flash memory utilizing TCAD simulations, especially focusing on structural effects in the 3D memories.

Back to Session information