[9a-S203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9a-S203-3] Nanosheet Oxide Semiconductor FETs with Amorphous and Polycrystalline InGaOx

〇(DC)Kota Sakai¹, Sunbin Hwang², Anlan Chen¹, Ki-woong Park¹, Xingyu Huang¹, Takuya Saraya¹, Toshiro Hiramoto¹, Takanori Takahashi³, Mutsunori Uenuma², Yukiharu Uraoka³, Masaharu Kobayashi¹ (1.IIS, The Univ. Tokyo, 2.AIST, 3.NAIST)

Keywords:

Oxide Semiconductor,InGaOx,polycrystalline

In this study, we aimed to address the challenge of simultaneously achieving high mobility and positive threshold voltage in oxide semiconductors, which is crucial for next-generation DRAM and three-dimensional integration, through crystallization of Ga-doped InOx films. We systematically evaluated device characteristics, reliability, and temperature dependence. Furthermore, we demonstrated that high-mobility polycrystalline oxide semiconductors exhibit transport characteristics dominated by intra-grain carrier scattering.