[9a-S203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[9a-S203-4] Gate-All-Around Nanosheet Oxide Semiconductor FETs with Selectively Crystallized InGaOx

〇(DC)Kota Sakai¹, Anlan Chen¹, Ki-woong Park¹, Xingyu Huang¹, Takuya Saraya¹, Toshiro Hiramoto¹, Sunbin Hwang², Takanori Takahashi³, Mutsunori Uenuma², Yukiharu Uraoka³, Masaharu Kobayashi¹ (1.IIS, The Univ. Tokyo, 2.AIST, 3.NAIST)

Keywords:

Oxide Semiconductor,channel release,selective crystallization

For the scaling of oxide semiconductor FETs, we established gate-all-around (GAA) nanosheet process through selective crystallization technique. In a stacked structure with InZnOx as the sacrificial layer and InGaOx as the channel layer, both capable of continuous deposition by ALD, we selectively crystallized only the channel layer through 400°C annealing, achieving high etching selectivity. The GAA InGaOx FETs demonstrated high on-current, positive threshold voltage, and excellent PBS reliability.