[9a-S203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[9a-S203-6] Formation of Work Function Metals for Advanced Gate-all-around CMOS FET

〇Kenzo Manabe¹, Misako Morota¹, Hiroyuki Ota¹, Yukinori Morita¹, Toshifumi Irisawa¹, Yoshihiro Hayashi¹ (1.SFRC, AIS)

Keywords:

metal gate,effective work function,gate-all-around device

In this study, we investigated the effect of the formation process of work function metal (WFM) on CV characteristics of high-k gate dielectric (HK) for GAAFET CMOS application. We found that the formation conditions such as wet over amount did not cause a serious damage on HK in terms of CV characteristics. We are going to discuss the effect of the formation process of WFM on HK leakage and the physical mechanism for the effect of residual Ti on EWF.