[9a-S203-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[9a-S203-7] Device Design of Nanosheet GAAFETs using Response Surface Method

〇Koichi Fukuda¹, Mariko Ninomiya¹, Junichi Hattori¹, Yoshihiro Hayashi¹ (1.AIST)

Keywords:

Semiconductor,nanosheet,device simulation

Response surface method is applied to device simulation results, and the device design of the nanosheet GAAFET is discussed.