[9p-N101-1~10] [Open Symposium] Cutting-edge logic semiconductors and associated technologies

4:15 PM - 4:45 PM JST(7:15 AM - 7:45 AM UTC)

[9p-N101-7] HZO ferroelectric memory and its implications for novel computing technologies

〇Kasidit TOPRASERTPONG¹, Zhenhong Liu¹, Kosuke Ito¹, Xuanhedong Gao¹, Seong-Kun Cho¹, Zuocheng Cai¹, Eishin Nako¹, Shin-Yi Min¹, Rikuo Suzuki¹, Ryosho Nakane¹, Mitsuru Takenaka¹, Shinichi Takagi^1,2 (1.Univ. Tokyo, 2.Teikyo Univ.)

Keywords:

Ferroelectric,Memory,Computing

Ferroelectric Hf_1-xZr_xO₂ (HZO) has been actively investigated as logic-embedded non-volatile memory with low power consumption and high scalablility. Not only memory application, but ferroelectric HZO has also been explored for emerging non-Neumann computing using unique features of spontaneous polarization. In this talk, we will make a brief review on ferroelectric HZO devices and share our recent research achivements.