[9p-N103-1~12] Advances in Soft X-ray Multilayer Optics for Short-Wavelength Beyond EUV Lithography

1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[9p-N103-1] EUV Lithography and Multilayer for X-ray

〇Hiroo Kinoshita¹ (1.University of Hyogo)

Keywords:

Extreme Ultraviolet Lithography,Selection of wavelength,Shortening of extreme Ultraviolet wavelength

The shortening of ultraviolet wavelengths was progressed from G-i-KrF-ArF, and F2 was also proposed, but it became impossible to configure a system for transmission type due to material limitations. Reflecting on the failure of life-size X-rays, X-ray reduction exposure was explored from 1984, and after investigating multilayer films that construct reflective optical systems, Mo/Si multilayer films were found to have high reflectance, so 13.5 nm was decided as the EUV wavelength. Even beyond EUV, the issue of practical application will be increasing the half-width of multilayer films.