[9p-N103-1~12] Advances in Soft X-ray Multilayer Optics for Short-Wavelength Beyond EUV Lithography

5:35 PM - 5:50 PM JST(8:35 AM - 8:50 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N103-12] Mo-based multilayer simulation for beyond EUV lithography

〇Naoki Hayase¹, Shinji Yamakawa¹, Tetsuo Harada¹ (1.LASTI, Univ. Hyogo)

Keywords:

Beyond EUV,Multilayer,Deposition process

Lithography at around 6.7 nm wavelength known as beyond EUV (BEUV), is expected to boost a further downscale of semiconductor devices. Design of BEUV multilayer mirror is an urgent task to realize photomasks and steppers for BEUV lithography. In this report, we simulate Mo compound multilayers, and highlight factors for high BEUV reflectivity due to surface roughness and scattered light intensity in deposition process.