[9p-N103-1~12] Advances in Soft X-ray Multilayer Optics for Short-Wavelength Beyond EUV Lithography

2:30 PM - 3:00 PM JST(5:30 AM - 6:00 AM UTC)

[9p-N103-3] Development of BEUV Multilayer Mirrors Using Ion Sputtering with Quantum Ellipsometry Enabled Precise Thickness Control

〇Takeo Ejima^1,2 (1.SRIS, Tohoku Univ., 2.IMRAM, Tohoku Univ.)

Keywords:

BEUV,reflection multilayer mirror

To realize next-generation semiconductor lithography using BEUV (Beyond Extreme Ultraviolet) light at 6.x nm, we analyzed reflectance degradation in LaN/B multilayer mirrors. The results show that all deposition parameters must be controlled within ±5% of the design values—stricter than for conventional EUV mirrors. To address this challenge, we propose a method combining ion sputtering and in-situ quantum ellipsometry, enabling precise control of film thickness, interface roughness, and multilayer period. This study contributes to advancing key technologies for BEUV lithographic optics.