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1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-1]Si concentration dependence of crystallinity and electrical properties of Si-doped β-Ga₂O₃ homoepitaxial layers grown by low-pressure hot-wall MOVPE

〇Yoshiki Iba¹, Junya Yoshinaga^1,2, Kakeru Kubota¹, Yuma Terauchi¹, Takeyoshi Onuma³, Masataka Higashiwaki^4,5, Yuzaburo Ban⁶, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO CORPORATION, 3.Kogakuin Univ., 4.Osaka Metropolitan Univ., 5.NICT, 6.TAIYO NIPPON SANSO ATI CORPORATION)

Keywords:

Gallium oxide,MOVPE,n-type doping

β-Ga₂O₃デバイス実用化にはn型ドリフト層のキャリア密度制御が必須で、最近我々は減圧ホットウォール有機金属気相成長(MOVPE)法を用い、Siが2.1 × 10¹⁵ ~ 1.5 × 10¹⁹ cm^-3ドープされたn型β-Ga₂O₃ホモエピタキシャル層の高速成長を報告した。今回、成長層の結晶性及び電気的特性のSi濃度依存性を検討したので報告する

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[9p-N105-1]Si concentration dependence of crystallinity and electrical properties of Si-doped β-Ga2O3 homoepitaxial layers grown by low-pressure hot-wall MOVPE

Keywords:

[9p-N105-1]Si concentration dependence of crystallinity and electrical properties of Si-doped β-Ga₂O₃ homoepitaxial layers grown by low-pressure hot-wall MOVPE