The 86th JSAP Autumn Meeting 2025
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Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-N105-1~21]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Sep 9, 2025 1:15 PM - 7:00 PM JST
Tue. Sep 9, 2025 4:15 AM - 10:00 AM UTC
N105 (Lecture Hall North)
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-1]Si concentration dependence of crystallinity and electrical properties of Si-doped β-Ga2O3 homoepitaxial layers grown by low-pressure hot-wall MOVPE

〇Yoshiki Iba1, Junya Yoshinaga1,2, Kakeru Kubota1, Yuma Terauchi1, Takeyoshi Onuma3, Masataka Higashiwaki4,5, Yuzaburo Ban6, Yoshinao Kumagai1 (1.Tokyo Univ. of Agric. and Tech., 2.TAIYO NIPPON SANSO CORPORATION, 3.Kogakuin Univ., 4.Osaka Metropolitan Univ., 5.NICT, 6.TAIYO NIPPON SANSO ATI CORPORATION)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-2]Photocapacitance Measurement of Ga2O3 Thin Films Grown by Low-Pressure Hot-Wall MOVPE

〇(M2)Jun Morihara1, Tsukasa Kakio1, Junya Yoshinaga2,3, Takafumi Kamimura4, Yoshinao Kumagai2, Masataka Higashiwaki1,4 (1.Osaka Metropolitan Univ., 2.Tokyo Univ. of Agric. and Tech., 3.TAIYO NIPPON SANSO CORPORATION, 4.NICT)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-3]Thermal Diffusion of Nitrogen Atoms in Nitrogen-Doped Ga2O3 Thin Films Grown by Molecular Beam Epitaxy

〇(M2)Jin Inajima1, Tomoki Uehara1, Kohki Tsujimoto1, Yusuke Teramura1, Satoko Honda1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-4]Structural and Electrical Characterization of n-Ga2O3 (010) Substrate doped with Nitrogen by Reactive Ion Etching

〇(M2)Akimasa Mineyama1, Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-5]GaCl etching of β-Ga2O3 substrates and its effect on homoepitaxial growth by HVPE

〇(M2)Kentaro Chukudaaru Kakuta1, Takatoshi Kikawa1, Takumi Ohtsuki2, Takafumi Kamimura2, Masataka Higashiwaki2,3, Yoshinao Kumagai1 (1.Tokyo Univ. of Agric. and Tech., 2.NICT, 3.Osaka Metropolitan Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-6]Fabrication of nitrogen doped Ga2O3 thin films by rf plasma-assisted ALD and the electrical characterization

〇Shodai Ata1, Katsuhiro Furukawa1, Hisashi Soma1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-7]Analysis of electronic structure of Hf-based ferroelectric/β-Ga2O3 interface

〇Katsuhiro K Furukawa1, Shodai Ata1, Takeshi Yoshimura1, Norifumi Fujimura1 (1.Osaka Metro. Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-8]Structure analysis by S/TEM for β-Ga2O3 epitaxial films deposited on diamond substrates

〇(M2)Itsuki Misono1, Sho Nekita1, Hongye Gao2, Yuto Ikegami1, Sreenath M. V.1, Yixin Wang1, Yuki Katamune3, A. Zkria1, Tsuyoshi Yoshitake1 (1.IGSES, Kyushu Univ., 2.URC, Kyushu Univ., 3.Kyushu Inst. Technol.)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-9]Effect of Si-doping on crystallinity of β-Ga2O3 films deposited on single crystalline diamond (111) substrates

〇Yuto Ikegami1, Sreenath M. V.1, Yixin Wang1, Itsuki Misono1, Yuki Katamune2, Hiroshi Naragino1, Shinya Ohmagari3, Taisuke Kageura3, A. Zkria1, Tsuyoshi Yoshitake1 (1.IGSES, Kyushu Univ., 2.Kyushu Inst. Technol., 3.AIST)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-10]Fabrication of rutile-type GeO2 films on glass substrates under high pressure

〇Keiji Shibata1, Fumio Kawamura2, Masahi Miyakawa2, Hitosi Yusa2, Naoomi Yamada1 (1.Chubu Univ., 2.NIMS)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-11]Phase stabilization and growth mechanism of rutile-type GeO2 by pulse laser deposition

〇Tomoya Suzuki1, Kaname Sakaban1, Keisuke Ide1,2, Takayoshi Katase1,2, Hidenori Hiramatsu1,2, Hideo Hosono1, Toshio Kamiya1,2 (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-12]Crystal Growth Dynamics of κ-Ga2O3 Thin Film on ε-GaFeO3 Substrate with Mist-CVD

〇(M2)Misuzu Sugimoto1, Taisei Kano1, Osamu Ueda2, Hiroyuki Nishinaka1 (1.Kyoto Inst. Tech., 2.Meiji Univ.)
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-13]Controlling the Conductivity of F-doped β-Ga2O3 by Mist CVD

〇Ichiro Seike1, Hiroki Miyake1,2, Hiroyuki Nishinaka1 (1.Kyoto Inst. Tech, 2.MIRISE Corp.)
4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-14]Epitaxial Growth and Structural Characterization of Nb-Doped (GaxIn1-x)2O3 Solid Solutions by Pulsed Laser Deposition

〇(M1)Masaharu Watanabe1,2, Atsushi Ogura1,3, Toyohiro Chikyow2, Takahiro Nagata2,1 (1.Meiji Univ., 2.NIMS, 3.MREL)
5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-15]High temperature growth of rs-MgO thin films on sapphire substrates.

〇Kosuke Kimura1, Shigeharu Kawabata1, Kohei Shima2, Kouichi Matsuo3, Kouji Uchida3, Atsushi Oono3, Isao Takahashi4, Tsutomu Araki1, Shigefusa Chichibu2, Kentaro Kaneko4,5 (1.Col. of Sci. & Eng. Ritsumeikan Univ., 2.IMRAM-Tohoku Univ., 3.IWASAKI ELECTRIC Co., Ltd., 4.ROST, 5.RISA)
5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-16]Investigation of α-Ga2O3 Optical Waveguides Fabricated by Selective Area Growth using Mist-CVD

〇(M1)Keidai Toyoshima1, Riena Jinno1, Natthajuks Pholsen2, Satoshi Iwamoto1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)
5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-17]Vertical Schottky barrier diodes with r-GeO2 epilayers grown on graded (GexSn1-x)O2 buffer layers on TiO2 substrate

〇Kazutaka Kanegae1, Kazuki Shimazoe2, Ichiro Seike1, Hiroyuki Nishinaka1 (1.Kyoto Inst. of Tech., 2.Nagoya Inst. of Tech.)
6:00 PM - 6:15 PM JST(9:00 AM - 9:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-18]Carrier trapping energy levels in β-Ga2O3 observed by carrier lifetime measurements

〇Takuma Ishihara1, Kazuki Shimazoe1, Kohei Sasaki2, Masashi Kato1 (1.NITech, 2.Novel Crystal Technology, Inc.)
6:15 PM - 6:30 PM JST(9:15 AM - 9:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-19]Killer Defects, a Combination of Stacking Faults, Microcracks, and Dislocation Networks in (001)HVPE-grown Ga2O3 Schottky Barrier Diodes

〇(M1)Makoto Sato1, Masanori Eguchi2, Saha Niloy Chandra1, Rao Badari3, Chia Hon Lin3, Kohei Sasaki3, Makoto Kasu1 (1.Dept.Sci.and Eng.,Saga Univ, 2.Saga Univ Synchrotron, 3.NCT,Inc.)
6:30 PM - 6:45 PM JST(9:30 AM - 9:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-20]Aqueous Solution Derived Nb-Doped Anatase TiO2 Coatings for Fuel Cell Separators

〇(M2)Ayaka Nakamura1, Rento Naito1, Megumi Ariga1, Tomohito Sudare2, Ryo Nakayama2, Ryota Shimizu3, Kentaro Kaneko4, Taro Hitosugi2, Naoomi Yamada1 (1.Chubu Univ., 2.Univ. Tokyo, 3.Inst. Mol. Sci., 4.ROST Ritsumeikan Univ.)
6:45 PM - 7:00 PM JST(9:45 AM - 10:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-21]Li ion injection and diffusion into amorphous TiOx by mist CVD and LIB characteristics

〇(M1)Fumiya Kobayashi1, Hajime Shirai2,3, Hideki Kurihara4, Koumei Yamamoto5, Kaien Ka5, Hirotaka Sone4, Tomomasa Sato2, Toshinori Ohno5 (1.Kanagawa Univ., 2.Kanagawa Univ. RIE., 3.Saitama Univ. RIE, 4.SAITEC, 5.AMAYA CO., LTD)
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