[9p-N105-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-11] Phase stabilization and growth mechanism of rutile-type GeO₂ by pulse laser deposition

〇Tomoya Suzuki¹, Kaname Sakaban¹, Keisuke Ide^1,2, Takayoshi Katase^1,2, Hidenori Hiramatsu^1,2, Hideo Hosono¹, Toshio Kamiya^1,2 (1.MDXES, Science Tokyo, 2.MSL, Science Tokyo)

Keywords:

Wide-Band-Gap oxide,Germanium Oxide,Film Growth

Rutile-type GeO₂ (r-GeO₂) is attracting attention as a wide-band-gap oxide semiconductor with potential for both p-type and n-type conduction. Although the number of reports on epitaxial growth of r-GeO₂ films has been increasing, the formation of competing polymorphs such as α-quartz and amorphous phases makes it difficult to grow high-quality epitaxial films. In this study, we systematically investigate effects of deposition conditions on growth of GeO₂ films by pulsed laser deposition. By optimizing the conditions, we successfully suppressed the formation of amorphous phase and achieved single-phase r-GeO₂ epitaxial films.