[9p-N105-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-16] Investigation of α-Ga₂O₃ Optical Waveguides Fabricated by Selective Area Growth using Mist-CVD

〇(M1)Keidai Toyoshima¹, Riena Jinno¹, Natthajuks Pholsen², Satoshi Iwamoto^1,2 (1.RCAST, Univ. of Tokyo, 2.IIS, Univ. of Tokyo)

Keywords:

gallium oxide,ultra-wide bandgap semiconductor,selective area growth

α-Ga₂O₃ is transparent over a wide wavelength range and can be epitaxially grown on sapphire substrates, which have lower refractive indices. This makes it a promising candidate for use as a photonic platform. Our group has demonstrated light propagation in optical waveguides fabricated by dry etching; however, sidewall roughness caused by the etching process remains a challenge. In this study, we investigated the potential for forming high-quality waveguide sidewalls through facet formation via selective area growth.