[9p-N105-1~21] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N105-5] GaCl etching of β-Ga₂O₃ substrates and its effect on homoepitaxial growth by HVPE

〇(M2)Kentaro Chukudaaru Kakuta¹, Takatoshi Kikawa¹, Takumi Ohtsuki², Takafumi Kamimura², Masataka Higashiwaki^2,3, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agric. and Tech., 2.NICT, 3.Osaka Metropolitan Univ.)

Keywords:

crystal growth,wide bandgap semiconductor

β-Ga₂O₃ is a promising material for power devices due to its high breakdown field strength. In addition, various homoepitaxial growth methods, such as halide vapor phase epitaxy (HVPE), have been investigate for fabrication of drift layers in devices. However, the absent of suitable chemical etchant leads to Si contamination and residual process damage on substrate surface. In our presentation, we will report improvement in crystalline quality of homoepitaxial layers via in situ etching of the substrate surfaces by GaCl, a typical Ga source in HVPE systems.