[9p-N206-1~15] 6.3 Oxide electronics

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-1] Metal-insulator transition properties of Ti₂O₃ films grown on van der Waals material hexagonal boron nitride

〇(M1)Keitaro Kanno¹, Takuto Soma¹, Satoru Fukamachi², Hiroki Ago², Akira Ohtomo¹, Kohei Yoshimatsu¹ (1.Science Tokyo, 2.Kyushu Univ.)

Keywords:

transition metal oxide,metal-insulator transition,hBN

Ti₂O₃ shows metal-insulator transition (MIT) at 450 K but Ti₂O₃ thin films show MIT at lower temperature and little resistivity change. We thought this is derived from the interaction between substrate and Ti₂O₃. We synthesized Ti₂O₃ thin films on van der Waals material hexagonal boron nitride (hBN). Ti₂O₃ film on hBN showed small c axis length, high MIT temperature and wide range of resistivity change compared with Ti₂O₃ film on α-Al₂O₃.