Presentation Information

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[9p-N206-13]Comparison of local resistance changes in nickel-oxide and gallium-tin-oxide thin films

〇(B)Shota Machi¹, Sota Mikami¹, Masamichi Azuma³, Hirofumi Yamada², Mutsumi Kimura¹, Hidenori Kawanishi¹, Hiroyuki Nishinaka³, Yuji Miyado¹ (1.Ryukoku Univ, 2.Ctr of Ryukoku Univ, 3.Grad. School of Sci. and Tech. Kyoto Inst. of Tech)

Keywords:

NiO,GTO,c-AFM

In this study, we investigated nickel oxide (NiO) and gallium-tin oxide (GTO) thin films, which are candidate materials for next-generation non-volatile memory. Using conductive atomic force microscopy (c-AFM), we directly observed local changes in surface resistance introduced by the application of a bias voltage. By comparing current images and local I–V characteristics obtained by c-AFM, we attributed the differences to the resistive switching mechanisms between NiO and GTO thin films

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