[9p-N206-1~15] 6.3 Oxide electronics

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-4] Modeling and analysis of resistance switching dynamics in amorphous GaO_x memristors based on semiconductor physics

〇(M2)Rion Ogura¹, Diao Zhuo¹, Tetsuya Tohei¹, Akira Sakai¹ (1.University of Osaka)

Keywords:

memristor,finite element method simulation,gallium oxide

Amorphous GaO_x(a-GaO_x) memristors can realize multi-level resistive states based on changes in the oxygen vacancy distribution in the device. In this study, a new physical model of a-GaO_x memristors was constructed to properly incorporate semiconductor properties that were simplified and not reflected in conventional simulation models of oxygen vacancy behavior. This enabled us to quantitatively evaluate the correlation between the spatial distribution of oxygen vacancies and electrical properties, and to analyze the resistance change phenomenon with higher accuracy.