[9p-N206-1~15] 6.3 Oxide electronics

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-6] Realisation of Field-Effect Transistor with a Freestanding SrTiO₃ Channel

〇(M2)Kosuke Tanaka^1,2, Hisashi Inoue², Ai Kitoh², Masafumi Tamura¹, Isao H Inoue^1,2 (1.Tokyo Univ. of Science, 2.AIST)

Keywords:

freestanding film,pulsed laser deposition,complex oxide

The diverse material properties of SrTiO₃ have attracted attention for its use in next-generation electronics, such as ultra-low-power neuromorphic computing. A key step toward realization is its integration with CMOS, posing a challenge due to the high temperature required to grow SrTiO₃ thin films. In this work, we report a SrTiO₃ freestanding membrane transistor fabricated on Si/SiO₂ substrate employing a recently reported low-temperature exfoliation and transfer method using a water-soluble sacrificial layer. By optimizing the fabrication process, the field-effect transistor exhibits excellent characteristics with a high on/off ratio and low gate leakage, comparable to that fabricated on a bare SrTiO₃ single crystal substrate. Our result opens a pathway toward energy-efficient oxide-electronics integrated with the CMOS platform.