[9p-N206-1~15] 6.3 Oxide electronics

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-7] Investigation of the Voltage Dependence of Depletion Capacitance in (La_1-xSr_x)VO₃/p-Si Junction

〇Kaito Fujitani¹, Koji Iwasaki¹, Shuhei Hashimoto¹, Ryosuke Takagi¹, Yasushi Hotta¹ (1.Univ. of Hyogo)

Keywords:

transition metal oxides,strongly correlated electron system,heterojunction

Transition metal oxides that belong to strongly correlated electron systems (SCES) are materials in which the charge, spin, and orbital degrees of freedom interact in a complex manner due to strong electron correlations originating from the d orbitals. Integrating these materials with silicon devices is expected to enable the development of novel functional devices that utilize the unique electronic properties of SCES. However, the electronic transport properties at the heterointerface, which are critical for realizing such devices, have been scarcely investigated. To address this, we directly formed a junction between the SCES material (La_1-xSr_x)VO₃ and a p-type Si substrate, and investigated the electronic transport characteristics at the interface using depletion capacitance–voltage measurements.