[9p-N206-1~15] 6.3 Oxide electronics

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N206-8] Fabrication and Current–Voltage Characterization of (La_1-xSr_x)VO₃/n-Si Junctions

〇(M1)Koji Iwasaki¹, Ryosuke Takagi¹, Shuhei Hashimoto¹, Kaito Hujitani¹, Yasushi Hotta¹ (1.Hyogo Univ.)

Keywords:

transition metal oxide,strongly correlated electron systems,silicon

As a pioneering study on the interface between strongly correlated electron system (SCES) materials with rich electronic properties and silicon (Si), we fabricated and joined LSVO(x) thin films on n-type Si substrates using pulsed laser deposition (PLD), and investigated their current–voltage (J–V) characteristics. The measurements revealed rectifying behavior similar to previous reports, with the turn-on voltage in forward bias decreasing as the Sr composition increased. This behavior is attributed to the transition of LSVO from a Mott insulator to a metallic state. These results contribute to a deeper understanding of carrier transport at SCES/Si junction interfaces.