[9p-N301-1~19] 15.4 III-V-group nitride crystals

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[9p-N301-10] Evaluation of Non-Radiative Recombination processes in GaN using Laser Heterodyne Photothermal Displacement Method

〇Yuta Hosokoshi¹, Yoshio Honda², Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.Univ. of Nagoya)

Keywords:

Wide bandgap semiconductor,material characterization,GaN