Presentation Information

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N301-12]Optical characterization of GaN crystals grown by Quartz-free hydride vapor phase epitaxy

〇Yuki Monnai¹, Fujikura Hajime², Konno Taichiro², Shota Kaneki², Koshi Sano¹, Shuhei Ichikawa^1,3, Tabata Hiroshi¹, Kazunobu Kojima¹ (1.Grad. Sch. of Eng., The Univ. of Osaka, 2.Sumitomo Chemical Co. Ltd., 3.Research Center for UHVEM, The Univ. of Osaka)

Keywords:

semiconductor,gallium nitride,hydride vapor phase epitaxy

Gallium nitride is expected to be a next-generation power semiconductor material due to its excellent physical properties; however, one of the challenges is the contamination of impurities during crystal growth. The sample measured in this study was fabricated using a quartz-free hydride vapor phase epitaxy, which successfully reduced the concentrations of major impurities such as carbon, silicon, and oxygen. In this research, we performed low-temperature photoluminescence (PL) measurements on these samples to investigate their emission mechanisms, and we report the results here.

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