Presentation Information

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardHighlighted Presentation

[9p-N301-3]High-Speed 3D Imaging of Threading Dislocations in GaN Using Stimulated Raman Scattering

〇Shun Takahashi¹, Yusuke Wakamoto¹, Kazuhiro Kuruma², Takuya Maeda¹, Yasuyuki Ozeki^1,2 (1.UTokyo, 2.RCAST)

Keywords:

GaN,dislocation,stimulated Raman scattering

We applied stimulated Raman scattering (SRS) microscopy, which is capable of high-speed imaging, to the observation of threading dislocations in a gallium nitride (GaN) single crystal and succeessfully achieved non-destructive, three-dimensional imaging of strain fields around dislocations. In addition, multiphoton photoluminescence (MPPL) signals were simultaneously acquired. Combining the information obtained from both SRS and MPPL enables detailed analysis of dislocation characteristics and their interactions.

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